Surface states and surface oxide in GaN layers

I. Shalish, Yoram Shapira, L. Burstein, J. Salzman

Research output: Contribution to journalArticlepeer-review

91 Scopus citations


Surface photovoltage spectroscopy, photoluminescence, Auger electron spectroscopy and x-ray photoelectron spectroscopy were used to correlate the chemical changes induced by HCl etching of GaN surface to changes in the yellow luminescence related states, through their manifestation in surface photovoltage. The results show a correlation between a removal of the gallium oxide from the surface and a reduction of the yellow luminescence related transition in the surface photovoltage spectra. Based on this observation, it is suggested that the well known yellow luminescence is emitted from surface states associated with the gallium oxide that decorates the free surface and possibly also the substrate interface and internal grain boundaries.

Original languageEnglish
Pages (from-to)390-395
Number of pages6
JournalJournal of Applied Physics
Issue number1
StatePublished - 1 Jan 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (all)


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