Surface termination control in chemically deposited PbS films: Nucleation and growth on GaAs(111)A and GaAs(111)B

A. Osherov, M. Matmor, N. Froumin, N. Ashkenasy, Y. Golan

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


This study addresses the question of whether chemically deposited PbS thin films grown on GaAs(111) are affected by the oppositely terminated substrate surfaces, gallium terminated GaAs(111)A and arsenic terminated GaAs(111)B. The differences in PbS film deposition pathway in both cases of substrate surface termination were investigated using X-ray photoelectron spectroscopy (XPS), Raman scattering, and contact potential difference (CPD) measurements. The morphology, microstructure, and crystallographic orientation of the films were studied using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. XPS and CPD measurements indicated that PbS films deposited on oppositely terminated GaAs(111) surfaces possessed corresponding surface terminations, with PbS(111)B obtained on GaAs(111)B and PbS(111)A on GaAs(111)A. Subsequently, different surface oxides were detected by XPS on A and B terminated PbS(111), with lead oxide obtained on PbS(111)A and PbSO3 obtained on PbS(111)B. Moreover, CPD measurements revealed that PbS(111)A shows a 40 mV smaller work function than PbS(111)B surfaces, therefore emphasizing the importance of polarity and surface termination control for heterojunction based electronic devices.

Original languageEnglish
Pages (from-to)16501-16508
Number of pages8
JournalJournal of Physical Chemistry C
Issue number33
StatePublished - 25 Aug 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


Dive into the research topics of 'Surface termination control in chemically deposited PbS films: Nucleation and growth on GaAs(111)A and GaAs(111)B'. Together they form a unique fingerprint.

Cite this