Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides

M. B. Sreedhara, K. Vasu, C. N.R. Rao

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

By making use of the fact that single- and few-layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica-like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600-650C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few-layer VN was obtained by high-temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.

Original languageEnglish
Pages (from-to)2737-2741
Number of pages5
JournalZeitschrift fur Anorganische und Allgemeine Chemie
Volume640
Issue number14
DOIs
StatePublished - 1 Nov 2014
Externally publishedYes

Keywords

  • Gallium
  • Layered compounds
  • Metal nitrides
  • Nanosheets
  • Nitridation
  • Photoluminescence

ASJC Scopus subject areas

  • Inorganic Chemistry

Fingerprint

Dive into the research topics of 'Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides'. Together they form a unique fingerprint.

Cite this