Abstract
By making use of the fact that single- and few-layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica-like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600-650C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few-layer VN was obtained by high-temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.
Original language | English |
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Pages (from-to) | 2737-2741 |
Number of pages | 5 |
Journal | Zeitschrift fur Anorganische und Allgemeine Chemie |
Volume | 640 |
Issue number | 14 |
DOIs | |
State | Published - 1 Nov 2014 |
Externally published | Yes |
Keywords
- Gallium
- Layered compounds
- Metal nitrides
- Nanosheets
- Nitridation
- Photoluminescence
ASJC Scopus subject areas
- Inorganic Chemistry