Synthesis and stability of two-dimensional Ge/Sn graphane alloys

Maxx Q. Arguilla, Shishi Jiang, Basant Chitara, Joshua E. Goldberger

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


There has been considerable interest in the germanium and tin graphane analogues due to their potential as optoelectronic building blocks, and novel topological materials. Here, we have synthesized for the first time alloyed germanium/tin graphane analogues from the topochemical deintercalation of CaGe2-2xSn2x (x = 0-0.09) in aqueous HCl. In these two-dimensional alloys, the germanium atom is terminated with hydrogen while tin is terminated with hydroxide. With greater tin incorporation, the band gap systematically shifts from 1.59 eV in GeH down to 1.38 eV for Ge0.91Sn0.09H0.91(OH)0.09, which allows for more sensitive photodetection at lower energies. In contrast to germanane's oxidation resistance, the Ge and Sn atoms in these graphane alloys rapidly oxidize upon exposure to air. This work demonstrates the possibility of creating functional tin-incorporated group IV graphane analogues.

Original languageEnglish
Pages (from-to)6941-6946
Number of pages6
JournalChemistry of Materials
Issue number24
StatePublished - 23 Dec 2014
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry


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