Synthesis of ZnO/CZTS Hetero-Structure Junction by Sol–Gel Spin Coating Technique

Pertaining to the optimal band alignment of ZnO and CZTS, the heterostructure was fabricated with CZTS as the absorber layer and ZnO being the buffer layer coated on the FTO glass for photovoltaic application. Both the layers were deposited by using sol–gel spin coating technique. The results revealed the polycrystalline nature of both ZnO and CZTS films with distinct phase formations, with ZnO exhibiting prominent diffraction peaks at 31.77, 34.31, 36.20, 47.47, and 56.59° corresponding to (100), (002), (101), (102), and (110) planes, while CZTS showed diffraction peaks at (112), (220), and (312) planes. ZnO thin films demonstrated high optical transmittance (∼90%) and exhibited a wide band gap of 3.24 eV, while CZTS demonstrated a band gap of 1.44 eV. AFM images showed smooth surfaces with favorable topography for both films. Hall effect measurements indicated differences in electrical properties of the two films. Raman spectroscopy revealed vibrational energy patterns in both films. Additionally, current–voltage (I-V) characteristics revealed the electrical behavior of the ZnO/CZTS heterojunction, shedding light on its diode characteristics under both dark and illuminated conditions. With CZTS’s ideal band gap of 1.44 eV, sunlight is easily absorbed, and ZnO’s high electron mobility makes it an effective layer for electron transport. As a result, power conversion efficiency can be improved.