Technology for thermodynamically stable contacts for binary wide band gap semiconductors

Ilan Shalish (Inventor), Yoram Shapira (Inventor), Moshe Eizenberg (Inventor)

Research output: Patent

Abstract

A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
Original languageEnglish
Patent numberUS6410460B1
StatePublished - 1 Jun 2002

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