A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
|Original language||English GB|
|State||Published - 1 Jun 2002|