Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Matthias Auf der Maur; Gilad Moses; Jeffrey M. Gordon; Xuanqi Huang; Yuji Zhao; Eugene A. Katz

doi:10.1016/j.solmat.2021.111253

Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Matthias Auf der Maur, Gilad Moses, Jeffrey M. Gordon, Xuanqi Huang, Yuji Zhao, Eugene A. Katz

The Swiss Institute for Dryland Environmental and Energy Research

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

Original language	English
Article number	111253
Journal	Solar Energy Materials and Solar Cells
Volume	230
DOIs	https://doi.org/10.1016/j.solmat.2021.111253
State	Published - 15 Sep 2021

Keywords

Band gap
Carrier recombination
Concentrator photovoltaics
InGaN/GaN multi-quantum wells
Open circuit voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2021.111253

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title = "Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells",

abstract = "Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.",

keywords = "Band gap, Carrier recombination, Concentrator photovoltaics, InGaN/GaN multi-quantum wells, Open circuit voltage",

author = "{Auf der Maur}, Matthias and Gilad Moses and Gordon, {Jeffrey M.} and Xuanqi Huang and Yuji Zhao and Katz, {Eugene A.}",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2021",

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doi = "10.1016/j.solmat.2021.111253",

language = "English",

volume = "230",

journal = "Solar Energy Materials and Solar Cells",

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TY - JOUR

T1 - Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

AU - Auf der Maur, Matthias

AU - Moses, Gilad

AU - Gordon, Jeffrey M.

AU - Huang, Xuanqi

AU - Zhao, Yuji

AU - Katz, Eugene A.

PY - 2021/9/15

Y1 - 2021/9/15

N2 - Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

AB - Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

KW - Band gap

KW - Carrier recombination

KW - Concentrator photovoltaics

KW - InGaN/GaN multi-quantum wells

KW - Open circuit voltage

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U2 - 10.1016/j.solmat.2021.111253

DO - 10.1016/j.solmat.2021.111253

M3 - Article

AN - SCOPUS:85108656429

SN - 0927-0248

VL - 230

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 111253

ER -

Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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