Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Matthias Auf der Maur, Gilad Moses, Jeffrey M. Gordon, Xuanqi Huang, Yuji Zhao, Eugene A. Katz

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

Original languageEnglish
Article number111253
JournalSolar Energy Materials and Solar Cells
Volume230
DOIs
StatePublished - 15 Sep 2021

Keywords

  • Band gap
  • Carrier recombination
  • Concentrator photovoltaics
  • InGaN/GaN multi-quantum wells
  • Open circuit voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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