Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

S. Hacohen-Gourgy; I. Diamant; B. Almog; Y. Dubi; G. Deutscher

doi:10.1063/1.3657146

Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

S. Hacohen-Gourgy, I. Diamant, B. Almog, Y. Dubi, G. Deutscher

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present the tunneling measurements of sub-micron metal/insulator/ graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang, Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected T_c, from the accepted mean field model [T. O. Wehling, Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated T_c.

Original language	English
Article number	172108
Journal	Applied Physics Letters
Volume	99
Issue number	17
DOIs	https://doi.org/10.1063/1.3657146
State	Published - 24 Oct 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions",

abstract = "We present the tunneling measurements of sub-micron metal/insulator/ graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang, Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected Tc, from the accepted mean field model [T. O. Wehling, Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated Tc.",

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AU - Hacohen-Gourgy, S.

AU - Diamant, I.

AU - Almog, B.

AU - Dubi, Y.

AU - Deutscher, G.

PY - 2011/10/24

Y1 - 2011/10/24

N2 - We present the tunneling measurements of sub-micron metal/insulator/ graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang, Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected Tc, from the accepted mean field model [T. O. Wehling, Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated Tc.

AB - We present the tunneling measurements of sub-micron metal/insulator/ graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang, Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected Tc, from the accepted mean field model [T. O. Wehling, Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated Tc.

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JF - Applied Physics Letters

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Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

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