Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence

S. Khatsevich; D. H. Rich; X. Zhang; W. Zhou; P. D. Dapkus

doi:10.1063/1.1641146

Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence

S. Khatsevich, D. H. Rich, X. Zhang, W. Zhou, P. D. Dapkus

Department of Physics

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The optical properties of InGaN quantum wells (QWs) grown on pyramidal GaN mesas prepared by LEO that resulted in QWs on facets were examined. As such, the effects of In migration during growth on the resulting QW composition and thickness were examined with TEM and various CL imaging techniques, including CL wavelength imaging and activation energy imaging (AEI). Spatial variations in the luminescence efficiency, QW interband transition energy, thermal activation energy, and exciton binding energy werre probed at various temperatures.

Original language	English
Pages (from-to)	1832-1842
Number of pages	11
Journal	Journal of Applied Physics
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.1641146
State	Published - 15 Feb 2004

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1641146

Cite this

@article{13794fcb8e9a4726828936e3545af9f3,

title = "Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence",

abstract = "The optical properties of InGaN quantum wells (QWs) grown on pyramidal GaN mesas prepared by LEO that resulted in QWs on facets were examined. As such, the effects of In migration during growth on the resulting QW composition and thickness were examined with TEM and various CL imaging techniques, including CL wavelength imaging and activation energy imaging (AEI). Spatial variations in the luminescence efficiency, QW interband transition energy, thermal activation energy, and exciton binding energy werre probed at various temperatures.",

author = "S. Khatsevich and Rich, {D. H.} and X. Zhang and W. Zhou and Dapkus, {P. D.}",

year = "2004",

month = feb,

day = "15",

doi = "10.1063/1.1641146",

language = "English",

volume = "95",

pages = "1832--1842",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence

AU - Khatsevich, S.

AU - Rich, D. H.

AU - Zhang, X.

AU - Zhou, W.

AU - Dapkus, P. D.

PY - 2004/2/15

Y1 - 2004/2/15

N2 - The optical properties of InGaN quantum wells (QWs) grown on pyramidal GaN mesas prepared by LEO that resulted in QWs on facets were examined. As such, the effects of In migration during growth on the resulting QW composition and thickness were examined with TEM and various CL imaging techniques, including CL wavelength imaging and activation energy imaging (AEI). Spatial variations in the luminescence efficiency, QW interband transition energy, thermal activation energy, and exciton binding energy werre probed at various temperatures.

AB - The optical properties of InGaN quantum wells (QWs) grown on pyramidal GaN mesas prepared by LEO that resulted in QWs on facets were examined. As such, the effects of In migration during growth on the resulting QW composition and thickness were examined with TEM and various CL imaging techniques, including CL wavelength imaging and activation energy imaging (AEI). Spatial variations in the luminescence efficiency, QW interband transition energy, thermal activation energy, and exciton binding energy werre probed at various temperatures.

UR - http://www.scopus.com/inward/record.url?scp=1542336959&partnerID=8YFLogxK

U2 - 10.1063/1.1641146

DO - 10.1063/1.1641146

M3 - Article

AN - SCOPUS:1542336959

SN - 0021-8979

VL - 95

SP - 1832

EP - 1842

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this