Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence

S. Khatsevich, D. H. Rich, X. Zhang, W. Zhou, P. D. Dapkus

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

The optical properties of InGaN quantum wells (QWs) grown on pyramidal GaN mesas prepared by LEO that resulted in QWs on facets were examined. As such, the effects of In migration during growth on the resulting QW composition and thickness were examined with TEM and various CL imaging techniques, including CL wavelength imaging and activation energy imaging (AEI). Spatial variations in the luminescence efficiency, QW interband transition energy, thermal activation energy, and exciton binding energy werre probed at various temperatures.

Original languageEnglish
Pages (from-to)1832-1842
Number of pages11
JournalJournal of Applied Physics
Volume95
Issue number4
DOIs
StatePublished - 15 Feb 2004

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