Temperature dependence of reverse breakdown voltages of N+P Si ultra shallow junctions

Herzl Aharoni; Yukio Tamai; Akira Nakada; Mauricio Massazumi Oka; Tadahiro Ohmi

doi:10.1109/EEEI.2002.1178315

Temperature dependence of reverse breakdown voltages of N⁺P Si ultra shallow junctions

Herzl Aharoni, Yukio Tamai, Akira Nakada, Mauricio Massazumi Oka, Tadahiro Ohmi

Department of Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

It is demonstrated that the dependence of the reverse breakdown voltage (V_B) on the ambient temperature (T) of modern shallow and ultra-shallow Si pn junctions, required for future ULSI scaled down devices, is drastically changed, with respect to that of the deeper, conventional Si pn junctions reported so far. In this work it is shown that unlike the conventional junctions in which the dV_B/dT sign was determined by the dopant concentrations, in the present ultrashallow Si junctions, dV_BdT can have positive, negative and zero slopes, in the same junction, almost independent of the dopant concentration.

Original language	English
Title of host publication	22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings
Publisher	Institute of Electrical and Electronics Engineers
Pages	50-52
Number of pages	3
ISBN (Electronic)	0780376935
DOIs	https://doi.org/10.1109/EEEI.2002.1178315
State	Published - 1 Jan 2002
Event	22nd Convention of Electrical and Electronics Engineers in Israel - Tel-Aviv, Israel Duration: 1 Dec 2002 → …

Publication series

Name	IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings
Volume	2002-January

Conference

Conference	22nd Convention of Electrical and Electronics Engineers in Israel
Country/Territory	Israel
City	Tel-Aviv
Period	1/12/02 → …

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EEEI.2002.1178315

Cite this

Aharoni, H., Tamai, Y., Nakada, A., Oka, M. M., & Ohmi, T. (2002). Temperature dependence of reverse breakdown voltages of N⁺P Si ultra shallow junctions. In 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings (pp. 50-52). Article 1178315 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/EEEI.2002.1178315

Aharoni, Herzl ; Tamai, Yukio ; Nakada, Akira et al. / Temperature dependence of reverse breakdown voltages of N⁺P Si ultra shallow junctions. 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers, 2002. pp. 50-52 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings).

@inproceedings{4adf274327a34fbca0a49657f94910d1,

title = "Temperature dependence of reverse breakdown voltages of N+P Si ultra shallow junctions",

abstract = "It is demonstrated that the dependence of the reverse breakdown voltage (VB) on the ambient temperature (T) of modern shallow and ultra-shallow Si pn junctions, required for future ULSI scaled down devices, is drastically changed, with respect to that of the deeper, conventional Si pn junctions reported so far. In this work it is shown that unlike the conventional junctions in which the dVB/dT sign was determined by the dopant concentrations, in the present ultrashallow Si junctions, dVBdT can have positive, negative and zero slopes, in the same junction, almost independent of the dopant concentration.",

author = "Herzl Aharoni and Yukio Tamai and Akira Nakada and Oka, {Mauricio Massazumi} and Tadahiro Ohmi",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/EEEI.2002.1178315",

language = "English",

series = "IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

pages = "50--52",

booktitle = "22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings",

address = "United States",

note = "22nd Convention of Electrical and Electronics Engineers in Israel ; Conference date: 01-12-2002",

}

Aharoni, H, Tamai, Y, Nakada, A, Oka, MM & Ohmi, T 2002, Temperature dependence of reverse breakdown voltages of N⁺P Si ultra shallow junctions. in 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings., 1178315, IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers, pp. 50-52, 22nd Convention of Electrical and Electronics Engineers in Israel, Tel-Aviv, Israel, 1/12/02. https://doi.org/10.1109/EEEI.2002.1178315

Temperature dependence of reverse breakdown voltages of N⁺P Si ultra shallow junctions. / Aharoni, Herzl; Tamai, Yukio; Nakada, Akira et al.
22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers, 2002. p. 50-52 1178315 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature dependence of reverse breakdown voltages of N+P Si ultra shallow junctions

AU - Aharoni, Herzl

AU - Tamai, Yukio

AU - Nakada, Akira

AU - Oka, Mauricio Massazumi

AU - Ohmi, Tadahiro

PY - 2002/1/1

Y1 - 2002/1/1

N2 - It is demonstrated that the dependence of the reverse breakdown voltage (VB) on the ambient temperature (T) of modern shallow and ultra-shallow Si pn junctions, required for future ULSI scaled down devices, is drastically changed, with respect to that of the deeper, conventional Si pn junctions reported so far. In this work it is shown that unlike the conventional junctions in which the dVB/dT sign was determined by the dopant concentrations, in the present ultrashallow Si junctions, dVBdT can have positive, negative and zero slopes, in the same junction, almost independent of the dopant concentration.

AB - It is demonstrated that the dependence of the reverse breakdown voltage (VB) on the ambient temperature (T) of modern shallow and ultra-shallow Si pn junctions, required for future ULSI scaled down devices, is drastically changed, with respect to that of the deeper, conventional Si pn junctions reported so far. In this work it is shown that unlike the conventional junctions in which the dVB/dT sign was determined by the dopant concentrations, in the present ultrashallow Si junctions, dVBdT can have positive, negative and zero slopes, in the same junction, almost independent of the dopant concentration.

UR - http://www.scopus.com/inward/record.url?scp=84955287681&partnerID=8YFLogxK

U2 - 10.1109/EEEI.2002.1178315

DO - 10.1109/EEEI.2002.1178315

M3 - Conference contribution

AN - SCOPUS:84955287681

T3 - IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

SP - 50

EP - 52

BT - 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 22nd Convention of Electrical and Electronics Engineers in Israel

Y2 - 1 December 2002

ER -

Aharoni H, Tamai Y, Nakada A, Oka MM, Ohmi T. Temperature dependence of reverse breakdown voltages of N⁺P Si ultra shallow junctions. In 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers. 2002. p. 50-52. 1178315. (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings). doi: 10.1109/EEEI.2002.1178315