Temperature dependence of reverse breakdown voltages of N+P Si ultra shallow junctions

Herzl Aharoni, Yukio Tamai, Akira Nakada, Mauricio Massazumi Oka, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

It is demonstrated that the dependence of the reverse breakdown voltage (VB) on the ambient temperature (T) of modern shallow and ultra-shallow Si pn junctions, required for future ULSI scaled down devices, is drastically changed, with respect to that of the deeper, conventional Si pn junctions reported so far. In this work it is shown that unlike the conventional junctions in which the dVB/dT sign was determined by the dopant concentrations, in the present ultrashallow Si junctions, dVBdT can have positive, negative and zero slopes, in the same junction, almost independent of the dopant concentration.

Original languageEnglish
Title of host publication22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages50-52
Number of pages3
ISBN (Electronic)0780376935
DOIs
StatePublished - 1 Jan 2002
Event22nd Convention of Electrical and Electronics Engineers in Israel - Tel-Aviv, Israel
Duration: 1 Dec 2002 → …

Publication series

NameIEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings
Volume2002-January

Conference

Conference22nd Convention of Electrical and Electronics Engineers in Israel
Country/TerritoryIsrael
CityTel-Aviv
Period1/12/02 → …

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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