TY - JOUR
T1 - Template growth of nanocrystalline PbS, CdS, and ZnS on a polydiacetylene langmuir film
T2 - An in situ grazing incidence X-ray diffraction study
AU - Lifshitz, Yevgeniy
AU - Konovalov, Oleg
AU - Belman, Nataly
AU - Berman, Amir
AU - Golan, Yuval
PY - 2006/12/4
Y1 - 2006/12/4
N2 - Chemical deposition of nanocrystalline PbS, CdS, and ZnS at the air/solution interface in the absence and presence of a polydiacetylene (PDA) Langmuir film is investigated in situ using grazing incidence X-ray diffraction. In all cases, it is found that PDA has a pronounced effect on the incipient semiconductor nanocrystals (NCs). In the presence of PDA, PbS NCs showed a 〈111〉 orientation in addition to the commonly obtained 〈100〉 growth direction of the PbS rock salt structure while CdS and ZnS NCs crystallized in the zinc blende polymorph with a predominant 〈100〉 orientation. ZnS NCs were obtained only in the presence of PDA at the air/solution interface.
AB - Chemical deposition of nanocrystalline PbS, CdS, and ZnS at the air/solution interface in the absence and presence of a polydiacetylene (PDA) Langmuir film is investigated in situ using grazing incidence X-ray diffraction. In all cases, it is found that PDA has a pronounced effect on the incipient semiconductor nanocrystals (NCs). In the presence of PDA, PbS NCs showed a 〈111〉 orientation in addition to the commonly obtained 〈100〉 growth direction of the PbS rock salt structure while CdS and ZnS NCs crystallized in the zinc blende polymorph with a predominant 〈100〉 orientation. ZnS NCs were obtained only in the presence of PDA at the air/solution interface.
UR - http://www.scopus.com/inward/record.url?scp=33845904673&partnerID=8YFLogxK
U2 - 10.1002/adfm.200600020
DO - 10.1002/adfm.200600020
M3 - Article
AN - SCOPUS:33845904673
SN - 1616-301X
VL - 16
SP - 2398
EP - 2404
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 18
ER -