The crystallization of amorphous Dy-Cu thin films

L. Shikhmanter; M. Talianker; M. P. Dariel

doi:10.1016/0040-6090(82)90070-0

The crystallization of amorphous Dy-Cu thin films

L. Shikhmanter
, M. Talianker
, M. P. Dariel

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The crystallization of vacuum-deposited amorphous Dy-35at.%Cu thin films was studied by transmission electron microscopy and electron diffraction. The transmission electron micrographs allowed us to follow the nucleation and subsequent growth of DyCu crystals within the amorphous matrix. The crystallization process is characterized by its sharp onset at 150 °C. The temperature dependence of the nucleation rate agrees with simple models. The growth rate increases linearly with temperature. The characteristic exponent n in Avrami's equation corresponds to a two-dimensional interface-controlled growth. The results allowed us to determine the free energy of critical nucleas formation (0.18 eV) and also the free energy associated with atomic migration (1 eV).

Original language	English
Pages (from-to)	51-56
Number of pages	6
Journal	Thin Solid Films
Volume	90
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(82)90070-0
State	Published - 2 Apr 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(82)90070-0

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title = "The crystallization of amorphous Dy-Cu thin films",

abstract = "The crystallization of vacuum-deposited amorphous Dy-35at.\%Cu thin films was studied by transmission electron microscopy and electron diffraction. The transmission electron micrographs allowed us to follow the nucleation and subsequent growth of DyCu crystals within the amorphous matrix. The crystallization process is characterized by its sharp onset at 150 °C. The temperature dependence of the nucleation rate agrees with simple models. The growth rate increases linearly with temperature. The characteristic exponent n in Avrami's equation corresponds to a two-dimensional interface-controlled growth. The results allowed us to determine the free energy of critical nucleas formation (0.18 eV) and also the free energy associated with atomic migration (1 eV).",

author = "L. Shikhmanter and M. Talianker and Dariel, \{M. P.\}",

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T1 - The crystallization of amorphous Dy-Cu thin films

AU - Shikhmanter, L.

AU - Talianker, M.

AU - Dariel, M. P.

PY - 1982/4/2

Y1 - 1982/4/2

N2 - The crystallization of vacuum-deposited amorphous Dy-35at.%Cu thin films was studied by transmission electron microscopy and electron diffraction. The transmission electron micrographs allowed us to follow the nucleation and subsequent growth of DyCu crystals within the amorphous matrix. The crystallization process is characterized by its sharp onset at 150 °C. The temperature dependence of the nucleation rate agrees with simple models. The growth rate increases linearly with temperature. The characteristic exponent n in Avrami's equation corresponds to a two-dimensional interface-controlled growth. The results allowed us to determine the free energy of critical nucleas formation (0.18 eV) and also the free energy associated with atomic migration (1 eV).

AB - The crystallization of vacuum-deposited amorphous Dy-35at.%Cu thin films was studied by transmission electron microscopy and electron diffraction. The transmission electron micrographs allowed us to follow the nucleation and subsequent growth of DyCu crystals within the amorphous matrix. The crystallization process is characterized by its sharp onset at 150 °C. The temperature dependence of the nucleation rate agrees with simple models. The growth rate increases linearly with temperature. The characteristic exponent n in Avrami's equation corresponds to a two-dimensional interface-controlled growth. The results allowed us to determine the free energy of critical nucleas formation (0.18 eV) and also the free energy associated with atomic migration (1 eV).

UR - https://www.scopus.com/pages/publications/0019871295

U2 - 10.1016/0040-6090(82)90070-0

DO - 10.1016/0040-6090(82)90070-0

M3 - Article

AN - SCOPUS:0019871295

SN - 0040-6090

VL - 90

SP - 51

EP - 56

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

The crystallization of amorphous Dy-Cu thin films

Abstract

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