Keyphrases
Grain Boundary
100%
Material-based
100%
Photosensitive Materials
100%
Annealing
50%
In Films
50%
Polycrystalline Films
50%
Growth Rate
25%
Gas Phase
25%
Single Crystal
25%
Room Temperature
25%
Increased Temperature
25%
Impurities
25%
Recombination
25%
Glass Substrate
25%
Potential Energy
25%
Photoconductivity
25%
Charge Carriers
25%
Charge Accumulation
25%
Free Carriers
25%
Barrier Height
25%
Grain Size
25%
Potential Barrier
25%
Optoelectronic Properties
25%
PbS Film
25%
Lead Sulfide
25%
Indium
25%
Substrate Temperature
25%
Polycrystalline Thin Films
25%
Oxygen-doped
25%
Thermally Activated Processes
25%
Carrier Lifetime
25%
Spatially Separated
25%
Indium Doping
25%
Persistent Photoconductivity
25%
Rising Temperature
25%
Hot Wall
25%
Doped Films
25%
Boundary Sets
25%
Optoelectronic Behavior
25%
Engineering
Grain Boundary
100%
Polycrystalline
100%
Optoelectronics
50%
Thin Films
25%
Gas-Phase
25%
Increasing Temperature
25%
Room Temperature
25%
Charge Carrier
25%
Glass Substrate
25%
Potential Energy
25%
Carrier Lifetime
25%
Activation Process
25%
Substrate Temperature
25%
Barrier Height
25%
Material Science
Film
100%
Grain Boundary
50%
Photoconductivity
25%
Indium
25%
Thin Films
12%
Single Crystal
12%
Charge Carrier
12%
Grain Size
12%
Carrier Lifetime
12%