The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition

P. Fini, X. Wu, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller, S. P. Denbaars, J. S. Speck

Research output: Contribution to journalArticlepeer-review

98 Scopus citations

Abstract

The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

Original languageEnglish
Pages (from-to)4460-4466
Number of pages7
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number8
DOIs
StatePublished - 1 Jan 1998
Externally publishedYes

Keywords

  • AFM
  • Extended defects
  • GaN
  • MOCVD
  • Surface morphology
  • TEM

ASJC Scopus subject areas

  • Engineering (all)
  • Physics and Astronomy (all)

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