The effect of mole-fraction on power spectral density of single quantum well based InxGa1-xN/GaN blue light emitting diode

Ashish Prajapati, Pritam Dey, T. D. Das

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A single quantum well Light Emitting Diode (LED) is designed from two different semiconductors and the main advantages of quantum well structure are high radiative efficiency, surface recombination etc. We have designed the device in order to observe the impact of mole fraction on power spectral density at different wave length by keeping the anode voltage fixed. A nearly lattice matched AlGaN-InGaN-GaN double hetero-structure semiconductor device has been simulated to get the maximum power spectral density at a particular wave length. For the anode voltage of 5V, at a mole fraction of x= 0.24 for Indium in InxGa1-xN, it is observed that a power spectral density of 9.31 W/cm-eV is obtained at a wave length of 452 nm. Observations were made for mole fraction varying from x=0.01 to 0.30.

Original languageEnglish
Title of host publicationInternational Conference on Microelectronics, Computing and Communication, MicroCom 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467366212
DOIs
StatePublished - 25 Jul 2016
Externally publishedYes
Event2016 International Conference on Microelectronics, Computing and Communication, MicroCom 2016 - Durgapur, India
Duration: 23 Jan 201625 Jan 2016

Publication series

NameInternational Conference on Microelectronics, Computing and Communication, MicroCom 2016

Conference

Conference2016 International Conference on Microelectronics, Computing and Communication, MicroCom 2016
Country/TerritoryIndia
CityDurgapur
Period23/01/1625/01/16

Keywords

  • Double hetero-structure
  • LED
  • Quantum well
  • mole fraction

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