The effect of residual hydrogen on hydrogenation behavior of titanium thin films

E. Tal-Gutelmacher, A. Pundt, R. Kirchheim

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The effect of residual hydrogen, sorbed during the deposition process, on the hydrogenation behavior of ion-beam sputtered titanium thin films was investigated. Electromotive force and in situ stress measurements were conducted to study hydrogen absorption, phase boundaries and hydrogen-induced stress development in the Ti-H thin film system. Tests were conducted on both as-sputtered and previously discharged films; the effect of residual hydrogen is significantly manifested in the thermodynamic isotherms and stress-concentration curves.

Original languageEnglish
Pages (from-to)709-712
Number of pages4
JournalScripta Materialia
Volume62
Issue number9
DOIs
StatePublished - 1 May 2010
Externally publishedYes

Keywords

  • Hydrogen
  • Sputtering
  • Stress
  • Thin films
  • Titanium

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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