Abstract
The effect of temperature on the initiation of light-induced defects in a-Se targets of high-gain avalanche rushing photoconductor (HARP) camera tubes was studied. At room temperature, avalanche a-Se was found to be subject to both reversible and irreversible photodarkening. At 35 °C, the irreversible photodarkening component was completely absent. This result is attributed to the instantaneous annealing of light-induced metastable coordination defects at elevated temperatures. A model for the formation of permanent crystalline areas at low temperatures via transition states associated with light-induced metastable defects is proposed.
Original language | English |
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Pages (from-to) | 1595-1598 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 352 |
Issue number | 9-20 SPEC. ISS. |
DOIs | |
State | Published - 15 Jun 2006 |
Keywords
- Amorphous semiconductors
- Defects
- Photoinduced effects
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry