The influence of TiN on cosputtered (Tin + Si) blanket film

Joshua Pelleg; Y. Shor

doi:10.1016/S0040-6090(02)01125-2

The influence of TiN on cosputtered (Tin + Si) blanket film

Joshua Pelleg, Y. Shor

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

X-ray diffraction, transmission electron microscopy and Auger spectroscopy were used to study the formation of TiSi₂ from a cosputtered (Ti + Si) film with and without TiN capping. In all cases, a metal rich silicide identified as Ti₅Si₃, was the first phase to form from the amorphous (Ti + Si) regardless if a TiN overlayer was or was not present. At temperatures of 923 K and below it only Ti₅Si₃ was observed in all specimens. C54 TiSi₂ formation is enhanced in specimens having a TiN capping and its formation occurs at lower temperatures and at a faster rate at some appropriate temperature than in specimens without TiN. The effect of tensile stress induced by the TiN layer is suggested as the reason of C54 TiSi₂ formation.

Original language	English
Pages (from-to)	258-266
Number of pages	9
Journal	Thin Solid Films
Volume	424
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(02)01125-2
State	Published - 31 Jan 2003

Keywords

C54 TiSi
Cosputtered (Ti + Si)
TiN
TiSi

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(02)01125-2

Cite this

@article{8e7b00b4da89497abb92f2c53e7b3867,

title = "The influence of TiN on cosputtered (Tin + Si) blanket film",

abstract = "X-ray diffraction, transmission electron microscopy and Auger spectroscopy were used to study the formation of TiSi2 from a cosputtered (Ti + Si) film with and without TiN capping. In all cases, a metal rich silicide identified as Ti5Si3, was the first phase to form from the amorphous (Ti + Si) regardless if a TiN overlayer was or was not present. At temperatures of 923 K and below it only Ti5Si3 was observed in all specimens. C54 TiSi2 formation is enhanced in specimens having a TiN capping and its formation occurs at lower temperatures and at a faster rate at some appropriate temperature than in specimens without TiN. The effect of tensile stress induced by the TiN layer is suggested as the reason of C54 TiSi2 formation.",

keywords = "C54 TiSi, Cosputtered (Ti + Si), TiN, TiSi",

author = "Joshua Pelleg and Y. Shor",

year = "2003",

month = jan,

day = "31",

doi = "10.1016/S0040-6090(02)01125-2",

language = "English",

volume = "424",

pages = "258--266",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - The influence of TiN on cosputtered (Tin + Si) blanket film

AU - Pelleg, Joshua

AU - Shor, Y.

PY - 2003/1/31

Y1 - 2003/1/31

N2 - X-ray diffraction, transmission electron microscopy and Auger spectroscopy were used to study the formation of TiSi2 from a cosputtered (Ti + Si) film with and without TiN capping. In all cases, a metal rich silicide identified as Ti5Si3, was the first phase to form from the amorphous (Ti + Si) regardless if a TiN overlayer was or was not present. At temperatures of 923 K and below it only Ti5Si3 was observed in all specimens. C54 TiSi2 formation is enhanced in specimens having a TiN capping and its formation occurs at lower temperatures and at a faster rate at some appropriate temperature than in specimens without TiN. The effect of tensile stress induced by the TiN layer is suggested as the reason of C54 TiSi2 formation.

AB - X-ray diffraction, transmission electron microscopy and Auger spectroscopy were used to study the formation of TiSi2 from a cosputtered (Ti + Si) film with and without TiN capping. In all cases, a metal rich silicide identified as Ti5Si3, was the first phase to form from the amorphous (Ti + Si) regardless if a TiN overlayer was or was not present. At temperatures of 923 K and below it only Ti5Si3 was observed in all specimens. C54 TiSi2 formation is enhanced in specimens having a TiN capping and its formation occurs at lower temperatures and at a faster rate at some appropriate temperature than in specimens without TiN. The effect of tensile stress induced by the TiN layer is suggested as the reason of C54 TiSi2 formation.

KW - C54 TiSi

KW - Cosputtered (Ti + Si)

KW - TiN

KW - TiSi

UR - https://www.scopus.com/pages/publications/0037474481

U2 - 10.1016/S0040-6090(02)01125-2

DO - 10.1016/S0040-6090(02)01125-2

M3 - Article

AN - SCOPUS:0037474481

SN - 0040-6090

VL - 424

SP - 258

EP - 266

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

The influence of TiN on cosputtered (Tin + Si) blanket film

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this