The nature of low-temperature minimum of resistivity in ceramic manganites

M. I. Auslender; E. Rozenberg; G. Gorodetsky

doi:10.4028/www.scientific.net/msf.373-376.601

The nature of low-temperature minimum of resistivity in ceramic manganites

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electrical transport and magnetization measurements were carried out on a ceramic samples of La_0.5Pb_0.5MnO₃ and La_0.5Pb_0.5MnO₃ containing 10 at.% of Ag in a dispersed form. The resistivity (ρ) at zero applied magnetic field exhibits a shallow minimum at the temperature T ∼ 25÷30 K. This minimum shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field H_er, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained.

Original language	English
Pages (from-to)	601-604
Number of pages	4
Journal	Materials Science Forum
Volume	373-376
DOIs	https://doi.org/10.4028/www.scientific.net/msf.373-376.601
State	Published - 1 Jan 2001
Event	8th European Magnetic Materials and Applications Conference (EMMA 2000) - Kyiv, Ukraine Duration: 7 Jun 2000 → 10 Jun 2000

Keywords

Doped polycrystalline La-manganites
Magnetoresistance and resistivity at low temperatures

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/msf.373-376.601

Cite this

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title = "The nature of low-temperature minimum of resistivity in ceramic manganites",

abstract = "Electrical transport and magnetization measurements were carried out on a ceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3 containing 10 at.\% of Ag in a dispersed form. The resistivity (ρ) at zero applied magnetic field exhibits a shallow minimum at the temperature T ∼ 25÷30 K. This minimum shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field Her, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained.",

keywords = "Doped polycrystalline La-manganites, Magnetoresistance and resistivity at low temperatures",

author = "Auslender, \{M. I.\} and E. Rozenberg and G. Gorodetsky",

year = "2001",

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doi = "10.4028/www.scientific.net/msf.373-376.601",

language = "English",

volume = "373-376",

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journal = "Materials Science Forum",

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note = "8th European Magnetic Materials and Applications Conference (EMMA 2000) ; Conference date: 07-06-2000 Through 10-06-2000",

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TY - JOUR

T1 - The nature of low-temperature minimum of resistivity in ceramic manganites

AU - Auslender, M. I.

AU - Rozenberg, E.

AU - Gorodetsky, G.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Electrical transport and magnetization measurements were carried out on a ceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3 containing 10 at.% of Ag in a dispersed form. The resistivity (ρ) at zero applied magnetic field exhibits a shallow minimum at the temperature T ∼ 25÷30 K. This minimum shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field Her, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained.

AB - Electrical transport and magnetization measurements were carried out on a ceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3 containing 10 at.% of Ag in a dispersed form. The resistivity (ρ) at zero applied magnetic field exhibits a shallow minimum at the temperature T ∼ 25÷30 K. This minimum shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field Her, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained.

KW - Doped polycrystalline La-manganites

KW - Magnetoresistance and resistivity at low temperatures

UR - https://www.scopus.com/pages/publications/0035183719

U2 - 10.4028/www.scientific.net/msf.373-376.601

DO - 10.4028/www.scientific.net/msf.373-376.601

M3 - Conference article

AN - SCOPUS:0035183719

SN - 0255-5476

VL - 373-376

SP - 601

EP - 604

JO - Materials Science Forum

JF - Materials Science Forum

T2 - 8th European Magnetic Materials and Applications Conference (EMMA 2000)

Y2 - 7 June 2000 through 10 June 2000

ER -

The nature of low-temperature minimum of resistivity in ceramic manganites

Abstract

Keywords

ASJC Scopus subject areas

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