Abstract
Electrical transport measurements were carried out on a ceramic samples of La0.5Pb0.5MnO3 containing 10 at.% of Ag in a dispersed form and La0.8Sr0.2MnO3. Their resistivity at zero applied magnetic field exhibits a shallow minimum at the interval of T∼25-30 K. This minimum shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field Hcr, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained in spite of significant difference in the crystallinity (grain size) of the samples.
Original language | English |
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Pages (from-to) | 81-84 |
Number of pages | 4 |
Journal | Journal of Alloys and Compounds |
Volume | 326 |
Issue number | 1-2 |
DOIs | |
State | Published - 9 Aug 2001 |
Event | Proceedings of the International on Magnetic Materials - Calcutta, India Duration: 17 Oct 2000 → 19 Oct 2000 |
Keywords
- Ceramics
- Doped La-manganites
- Magnetoresistance
- Tunneling resistivity
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry