The nature of the low-temperature minimum of resistivity in ceramic manganites

M. I. Auslender, E. Rozenberg, A. E. Kar'kin, B. K. Chaudhuri, G. Gorodetsky

Research output: Contribution to journalConference articlepeer-review

40 Scopus citations

Abstract

Electrical transport measurements were carried out on a ceramic samples of La0.5Pb0.5MnO3 containing 10 at.% of Ag in a dispersed form and La0.8Sr0.2MnO3. Their resistivity at zero applied magnetic field exhibits a shallow minimum at the interval of T∼25-30 K. This minimum shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field Hcr, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained in spite of significant difference in the crystallinity (grain size) of the samples.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalJournal of Alloys and Compounds
Volume326
Issue number1-2
DOIs
StatePublished - 9 Aug 2001
EventProceedings of the International on Magnetic Materials - Calcutta, India
Duration: 17 Oct 200019 Oct 2000

Keywords

  • Ceramics
  • Doped La-manganites
  • Magnetoresistance
  • Tunneling resistivity

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