The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

Noy Zakay, Shlomo Rand, Alexander Rashkovskiy, Nitzan Maman, Vladimir Ezersky, Yuval Golan

Research output: Contribution to journalArticlepeer-review

Abstract

Using 5 commonly employed precursors for Zn2+ cations, ZnSO4, ZnI2, ZnCl2, Zn(NO3)2, and Zn(CH3COO)2, we demonstrate the effect of counterions on ZnS thin film formation. We show that both film nucleation and growth stages are strongly dependent on the Zn2+ precursor type. We systematically studied the mechanisms of thin film deposition on GaAs(100), including solution-substrate interactions, Zn2+ ion adsorption on the substrate, and nuclei formation as well as stress accumulation during film growth. It was shown that the early stages of film formation play a key role in the subsequent growth kinetics and resulting film quality. X-ray photoelectron spectroscopy, supported by contact angle measurements, transmission electron microscopy, and energy-dispersive spectroscopy showed that increasing the degree of surface oxidation and passivation at the early stages of ZnS film formation inhibits solution desorption. Finally, the previously reported mechanism of crack formation is explored through an interrupted growth series of ZnS films deposited from solutions with different Zn2+ precursors.

Original languageEnglish
Pages (from-to)24104-24114
Number of pages11
JournalInorganic Chemistry
Volume63
Issue number51
DOIs
StatePublished - 23 Dec 2024

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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