Theoretical analysis of dopant redistribution in silicon after implantation through an SiO2 mask

J. Pelleg; M. Sinder

doi:10.1063/1.357726

Theoretical analysis of dopant redistribution in silicon after implantation through an SiO₂ mask

J. Pelleg, M. Sinder

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The redistribution after annealing in silicon of dopant implanted through a silicon oxide mask is discussed. The conditions which are essential to analyze diffusion profiles by simple Gaussian function are presented. The finite thickness of the oxide mask is taken into consideration. Experimental data of implanted P are compared with the exact and approximated solutions and it is shown that the use of the Gaussian approximation is within of ∼12% accuracy of the exact solution.

Original language	English
Pages (from-to)	1511-1514
Number of pages	4
Journal	Journal of Applied Physics
Volume	76
Issue number	3
DOIs	https://doi.org/10.1063/1.357726
State	Published - 1 Dec 1994

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General Physics and Astronomy

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10.1063/1.357726

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@article{f944bb3166fb4badae45d2d531c45b45,

title = "Theoretical analysis of dopant redistribution in silicon after implantation through an SiO2 mask",

abstract = "The redistribution after annealing in silicon of dopant implanted through a silicon oxide mask is discussed. The conditions which are essential to analyze diffusion profiles by simple Gaussian function are presented. The finite thickness of the oxide mask is taken into consideration. Experimental data of implanted P are compared with the exact and approximated solutions and it is shown that the use of the Gaussian approximation is within of ∼12\% accuracy of the exact solution.",

author = "J. Pelleg and M. Sinder",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.357726",

language = "English",

volume = "76",

pages = "1511--1514",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Theoretical analysis of dopant redistribution in silicon after implantation through an SiO2 mask

AU - Pelleg, J.

AU - Sinder, M.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The redistribution after annealing in silicon of dopant implanted through a silicon oxide mask is discussed. The conditions which are essential to analyze diffusion profiles by simple Gaussian function are presented. The finite thickness of the oxide mask is taken into consideration. Experimental data of implanted P are compared with the exact and approximated solutions and it is shown that the use of the Gaussian approximation is within of ∼12% accuracy of the exact solution.

AB - The redistribution after annealing in silicon of dopant implanted through a silicon oxide mask is discussed. The conditions which are essential to analyze diffusion profiles by simple Gaussian function are presented. The finite thickness of the oxide mask is taken into consideration. Experimental data of implanted P are compared with the exact and approximated solutions and it is shown that the use of the Gaussian approximation is within of ∼12% accuracy of the exact solution.

UR - https://www.scopus.com/pages/publications/0028493192

U2 - 10.1063/1.357726

DO - 10.1063/1.357726

M3 - Article

AN - SCOPUS:0028493192

SN - 0021-8979

VL - 76

SP - 1511

EP - 1514

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Theoretical analysis of dopant redistribution in silicon after implantation through an SiO₂ mask

Abstract

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