Theoretical approach to CMOS APS PSF and MTF modeling - Evaluation

Dan Grois; Igor Shcherback; Tatiana Danov; Orly Yadid-Pecht

doi:10.1109/JSEN.2005.856128

Theoretical approach to CMOS APS PSF and MTF modeling - Evaluation

Dan Grois
, Igor Shcherback
, Tatiana Danov
, Orly Yadid-Pecht

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this work, a fully theoretical CMOS active pixel sensor (APS) modulation transfer function model is formulated, evaluated, and compared with practical results. The model is based on a two-dimensional diffusion equation solution and covers the symmetrical photocarriers diffusion effect together with the impact of the pixel active area geometrical shape. Thorough scanning results obtained by means of a unique submicron scanning system (the S-cube system) from various APS chips, implemented in a standard CMOS 0.35-μm technology, are compared with our theoretical predictions. The agreement of the presented comparison results indicates that for any potential active area shape, an analytical reliable estimate of image performance is possible.

Original language	English
Pages (from-to)	118-123
Number of pages	6
Journal	IEEE Sensors Journal
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/JSEN.2005.856128
State	Published - 1 Feb 2006

Keywords

Active pixel sensor (APS)
CMOS image sensor
Diffusion process
Modeling
Modulation transfer function (MTF)
Point spread function (PSF)

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2005.856128

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@article{b7b61cd3fe7b46acb626b318acfdde02,

title = "Theoretical approach to CMOS APS PSF and MTF modeling - Evaluation",

abstract = "In this work, a fully theoretical CMOS active pixel sensor (APS) modulation transfer function model is formulated, evaluated, and compared with practical results. The model is based on a two-dimensional diffusion equation solution and covers the symmetrical photocarriers diffusion effect together with the impact of the pixel active area geometrical shape. Thorough scanning results obtained by means of a unique submicron scanning system (the S-cube system) from various APS chips, implemented in a standard CMOS 0.35-μm technology, are compared with our theoretical predictions. The agreement of the presented comparison results indicates that for any potential active area shape, an analytical reliable estimate of image performance is possible.",

keywords = "Active pixel sensor (APS), CMOS image sensor, Diffusion process, Modeling, Modulation transfer function (MTF), Point spread function (PSF)",

author = "Dan Grois and Igor Shcherback and Tatiana Danov and Orly Yadid-Pecht",

year = "2006",

month = feb,

day = "1",

doi = "10.1109/JSEN.2005.856128",

language = "English",

volume = "6",

pages = "118--123",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers",

number = "1",

}

TY - JOUR

T1 - Theoretical approach to CMOS APS PSF and MTF modeling - Evaluation

AU - Grois, Dan

AU - Shcherback, Igor

AU - Danov, Tatiana

AU - Yadid-Pecht, Orly

PY - 2006/2/1

Y1 - 2006/2/1

N2 - In this work, a fully theoretical CMOS active pixel sensor (APS) modulation transfer function model is formulated, evaluated, and compared with practical results. The model is based on a two-dimensional diffusion equation solution and covers the symmetrical photocarriers diffusion effect together with the impact of the pixel active area geometrical shape. Thorough scanning results obtained by means of a unique submicron scanning system (the S-cube system) from various APS chips, implemented in a standard CMOS 0.35-μm technology, are compared with our theoretical predictions. The agreement of the presented comparison results indicates that for any potential active area shape, an analytical reliable estimate of image performance is possible.

AB - In this work, a fully theoretical CMOS active pixel sensor (APS) modulation transfer function model is formulated, evaluated, and compared with practical results. The model is based on a two-dimensional diffusion equation solution and covers the symmetrical photocarriers diffusion effect together with the impact of the pixel active area geometrical shape. Thorough scanning results obtained by means of a unique submicron scanning system (the S-cube system) from various APS chips, implemented in a standard CMOS 0.35-μm technology, are compared with our theoretical predictions. The agreement of the presented comparison results indicates that for any potential active area shape, an analytical reliable estimate of image performance is possible.

KW - Active pixel sensor (APS)

KW - CMOS image sensor

KW - Diffusion process

KW - Modeling

KW - Modulation transfer function (MTF)

KW - Point spread function (PSF)

UR - https://www.scopus.com/pages/publications/31144469731

U2 - 10.1109/JSEN.2005.856128

DO - 10.1109/JSEN.2005.856128

M3 - Article

AN - SCOPUS:31144469731

SN - 1530-437X

VL - 6

SP - 118

EP - 123

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 1

ER -

Theoretical approach to CMOS APS PSF and MTF modeling - Evaluation

Abstract

Keywords

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