Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

S. Hava, M. Hava

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

Original languageEnglish
Pages (from-to)1122-1125
Number of pages4
JournalApplied Optics
Volume32
Issue number7
DOIs
StatePublished - 1 Jan 1993

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