Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

S. Hava; M. Hava

doi:10.1364/AO.32.001122

Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

S. Hava, M. Hava

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm⁻³. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

Original language	English
Pages (from-to)	1122-1125
Number of pages	4
Journal	Applied Optics
Volume	32
Issue number	7
DOIs	https://doi.org/10.1364/AO.32.001122
State	Published - 1 Jan 1993

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title = "Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration",

abstract = "The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.",

author = "S. Hava and M. Hava",

year = "1993",

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doi = "10.1364/AO.32.001122",

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AU - Hava, S.

AU - Hava, M.

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N2 - The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

AB - The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

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JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 7

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Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

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