Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

S. Hava; M. Hava

doi:10.1364/AO.32.001122

Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

S. Hava
, M. Hava

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm⁻³. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

Original language	English
Pages (from-to)	1122-1125
Number of pages	4
Journal	Applied Optics
Volume	32
Issue number	7
DOIs	https://doi.org/10.1364/AO.32.001122
State	Published - 1 Jan 1993

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/AO.32.001122

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title = "Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration",

abstract = "The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.",

author = "S. Hava and M. Hava",

year = "1993",

month = jan,

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doi = "10.1364/AO.32.001122",

language = "English",

volume = "32",

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journal = "Applied Optics",

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T1 - Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

AU - Hava, S.

AU - Hava, M.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

AB - The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk ra-Si are calculated for electron concentrations as high as ˜ 1.3 × 1020 cm−3. These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.

UR - https://www.scopus.com/pages/publications/77949355777

U2 - 10.1364/AO.32.001122

DO - 10.1364/AO.32.001122

M3 - Article

AN - SCOPUS:77949355777

SN - 1559-128X

VL - 32

SP - 1122

EP - 1125

JO - Applied Optics

JF - Applied Optics

IS - 7

ER -

Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration

Abstract

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