Theoretical investigation of implanted dopant diffusion from a silicide layer to the silicon wafer for ultra shallow p-n junction formation

M. Sinder, J. Pelleg

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work a theoretical model is presented to analyze the technique recently suggested to form shallow p-n junction. According to this technique a silicide acts as a source of a dopant and it is followed by controlled diffusion anneal to accomplish the dopant penetration into a silicon wafer. In our analysis the dependence of the p-n junction depth on process parameters is discussed. The model considers two cases, namely, with and without dopant evaporation. Experimental data for B diffusion from CoSi2 acting as the source are used to evaluate our theoretical model. The agreement between theoretical and experimental results is satisfactory.

Original languageEnglish
Pages (from-to)233-239
Number of pages7
JournalMaterials Research Society Symposium Proceedings
Volume389
DOIs
StatePublished - 1 Jan 1995
EventProceedings of the Spring Meeting on MRS - San Francisco, CA, USA
Duration: 17 Apr 199520 Apr 1995

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