Abstract
The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 °C for 72 h.
Original language | English |
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Pages (from-to) | 323-329 |
Number of pages | 7 |
Journal | Materials Chemistry and Physics |
Volume | 124 |
Issue number | 1 |
DOIs | |
State | Published - 1 Nov 2010 |
Keywords
- AFM
- Etching
- H PO
- Light interferometry
- Mechanical properties
- Sapphire
- Strength
- Thermal Annealing
- X-ray rocking curve
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics