Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

K. Rammohan; D. H. Rich; M. H. MacDougal; P. D. Dapkus

doi:10.1063/1.118627

Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

K. Rammohan
, D. H. Rich
, M. H. MacDougal
, P. D. Dapkus

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have investigated the effects of thermal cycling on the optical properties of In_0.2Ga_0.8AS/GaAs single quantum well films bonded to Si(001) via the epitaxial lift-off technique. The optical and structural quality of the bonded films were monitored using cathodoluminescence (CL) imaging and spectroscopy. The films were stable through the temperature range (500-700 °C) used in normal In_xGa_1-xAs device processing. However, annealing at temperatures greater than ∼700 °C resulted in layer intermixing accompanied by a blue-shift in the CL peak energy. The shifts in the CL peak energy were modeled by considering In-Ga interdiffusion at the interface and solving the Schrödinger equation using appropriate band profiles for this region.

Original language	English
Pages (from-to)	1599-1601
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	12
DOIs	https://doi.org/10.1063/1.118627
State	Published - 24 Mar 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.118627

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title = "Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique",

abstract = "We have investigated the effects of thermal cycling on the optical properties of In0.2Ga0.8AS/GaAs single quantum well films bonded to Si(001) via the epitaxial lift-off technique. The optical and structural quality of the bonded films were monitored using cathodoluminescence (CL) imaging and spectroscopy. The films were stable through the temperature range (500-700 °C) used in normal InxGa1-xAs device processing. However, annealing at temperatures greater than ∼700 °C resulted in layer intermixing accompanied by a blue-shift in the CL peak energy. The shifts in the CL peak energy were modeled by considering In-Ga interdiffusion at the interface and solving the Schr{\"o}dinger equation using appropriate band profiles for this region.",

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year = "1997",

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T1 - Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

AU - Rammohan, K.

AU - Rich, D. H.

AU - MacDougal, M. H.

AU - Dapkus, P. D.

PY - 1997/3/24

Y1 - 1997/3/24

N2 - We have investigated the effects of thermal cycling on the optical properties of In0.2Ga0.8AS/GaAs single quantum well films bonded to Si(001) via the epitaxial lift-off technique. The optical and structural quality of the bonded films were monitored using cathodoluminescence (CL) imaging and spectroscopy. The films were stable through the temperature range (500-700 °C) used in normal InxGa1-xAs device processing. However, annealing at temperatures greater than ∼700 °C resulted in layer intermixing accompanied by a blue-shift in the CL peak energy. The shifts in the CL peak energy were modeled by considering In-Ga interdiffusion at the interface and solving the Schrödinger equation using appropriate band profiles for this region.

AB - We have investigated the effects of thermal cycling on the optical properties of In0.2Ga0.8AS/GaAs single quantum well films bonded to Si(001) via the epitaxial lift-off technique. The optical and structural quality of the bonded films were monitored using cathodoluminescence (CL) imaging and spectroscopy. The films were stable through the temperature range (500-700 °C) used in normal InxGa1-xAs device processing. However, annealing at temperatures greater than ∼700 °C resulted in layer intermixing accompanied by a blue-shift in the CL peak energy. The shifts in the CL peak energy were modeled by considering In-Ga interdiffusion at the interface and solving the Schrödinger equation using appropriate band profiles for this region.

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DO - 10.1063/1.118627

M3 - Article

AN - SCOPUS:0347884989

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VL - 70

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

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