Thermal properties of ultrathin hafnium oxide gate dielectric films

Matthew A. Panzer; Michael Shandalov; Jeremy A. Rowlette; Yasuhiro Oshima; Yi Wei Chen; Paul C. McIntyre; Kenneth E. Goodson

doi:10.1109/LED.2009.2032937

Thermal properties of ultrathin hafnium oxide gate dielectric films

Matthew A. Panzer
, Michael Shandalov
, Jeremy A. Rowlette
, Yasuhiro Oshima
, Yi Wei Chen
, Paul C. McIntyre
, Kenneth E. Goodson

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

Thin-film HfO₂ is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56200- Å-thick HfO₂ films. A picosecond pumpprobe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/mK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.

Original language	English
Article number	5306179
Pages (from-to)	1269-1271
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	12
DOIs	https://doi.org/10.1109/LED.2009.2032937
State	Published - 1 Dec 2009
Externally published	Yes

Keywords

Hafnium oxide
Picosecond pump-probe thermometry
Thermal conductivity
Thermal interface resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2032937

Cite this

@article{35402fbf2e1948229a7bab1905297367,

title = "Thermal properties of ultrathin hafnium oxide gate dielectric films",

abstract = "Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56200- {\AA}-thick HfO2 films. A picosecond pumpprobe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/mK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.",

keywords = "Hafnium oxide, Picosecond pump-probe thermometry, Thermal conductivity, Thermal interface resistance",

author = "Panzer, \{Matthew A.\} and Michael Shandalov and Rowlette, \{Jeremy A.\} and Yasuhiro Oshima and Chen, \{Yi Wei\} and McIntyre, \{Paul C.\} and Goodson, \{Kenneth E.\}",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/LED.2009.2032937",

language = "English",

volume = "30",

pages = "1269--1271",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "12",

}

TY - JOUR

T1 - Thermal properties of ultrathin hafnium oxide gate dielectric films

AU - Panzer, Matthew A.

AU - Shandalov, Michael

AU - Rowlette, Jeremy A.

AU - Oshima, Yasuhiro

AU - Chen, Yi Wei

AU - McIntyre, Paul C.

AU - Goodson, Kenneth E.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56200- Å-thick HfO2 films. A picosecond pumpprobe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/mK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.

AB - Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56200- Å-thick HfO2 films. A picosecond pumpprobe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/mK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.

KW - Hafnium oxide

KW - Picosecond pump-probe thermometry

KW - Thermal conductivity

KW - Thermal interface resistance

UR - https://www.scopus.com/pages/publications/70549091173

U2 - 10.1109/LED.2009.2032937

DO - 10.1109/LED.2009.2032937

M3 - Article

AN - SCOPUS:70549091173

SN - 0741-3106

VL - 30

SP - 1269

EP - 1271

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 5306179

ER -

Thermal properties of ultrathin hafnium oxide gate dielectric films

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this