Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors

I. Hirsch; E. Berman; N. Haik

doi:10.1016/0038-1101(93)90076-3

Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors

I. Hirsch, E. Berman, N. Haik

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Original language	English
Pages (from-to)	106-108
Number of pages	3
Journal	Solid State Electronics
Volume	36
Issue number	1
DOIs	https://doi.org/10.1016/0038-1101(93)90076-3
State	Published - 1 Jan 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(93)90076-3

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title = "Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors",

author = "I. Hirsch and E. Berman and N. Haik",

year = "1993",

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AU - Hirsch, I.

AU - Berman, E.

AU - Haik, N.

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JO - Solid State Electronics

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Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors

ASJC Scopus subject areas

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