TY - GEN
T1 - Thermoelectric properties of p-type In-doped Pb1-xSn xTe
AU - Gelbstein, Y.
AU - Dashevsky, Z.
AU - George, Y.
AU - Dariel, M. P.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Lead tin telluride based alloys are p-type materials for thermoelectric applications in the 50-600°C temperatures range. Optimization of the thermoelectric properties for optimal performance at various temperature ranges can be achieved by varying the composition (x values) in Pb1-xSn xTe alloys. A different approach for controlling the carrier concentration can be obtained by indium doping of Pb]. xSn xTe alloys at a fixed composition. According to this second approach, a controlled energy gap and specific lattice thermal conductivity can be obtained. This communication focuses on the development of Pb 0.5Sn0.5Te alloys doped to different levels of indium concentration. The preparation techniques included preparation of master alloys with the desired composition, comminuting to appropriate powder particle size, cold compaction, sintering and annealing. The prepared samples were examined by SEM, EDS, XRD and the transport properties were determined. Maximal power factor values in the range of 11-12μW/cmK2 were obtained at temperatures of 150, 250 and 380°C for indium doping of 0.5, 0.1 0.03at%In. respectively.
AB - Lead tin telluride based alloys are p-type materials for thermoelectric applications in the 50-600°C temperatures range. Optimization of the thermoelectric properties for optimal performance at various temperature ranges can be achieved by varying the composition (x values) in Pb1-xSn xTe alloys. A different approach for controlling the carrier concentration can be obtained by indium doping of Pb]. xSn xTe alloys at a fixed composition. According to this second approach, a controlled energy gap and specific lattice thermal conductivity can be obtained. This communication focuses on the development of Pb 0.5Sn0.5Te alloys doped to different levels of indium concentration. The preparation techniques included preparation of master alloys with the desired composition, comminuting to appropriate powder particle size, cold compaction, sintering and annealing. The prepared samples were examined by SEM, EDS, XRD and the transport properties were determined. Maximal power factor values in the range of 11-12μW/cmK2 were obtained at temperatures of 150, 250 and 380°C for indium doping of 0.5, 0.1 0.03at%In. respectively.
UR - http://www.scopus.com/inward/record.url?scp=46149126223&partnerID=8YFLogxK
U2 - 10.1109/ICT.2006.331274
DO - 10.1109/ICT.2006.331274
M3 - Conference contribution
AN - SCOPUS:46149126223
SN - 1424408105
SN - 9781424408108
T3 - International Conference on Thermoelectrics, ICT, Proceedings
SP - 79
EP - 80
BT - Proceedings ICT'06 - 25th International Conference on Thermoelectrics
T2 - ICT'06 - 25th International Conference on Thermoelectrics
Y2 - 6 August 2006 through 10 August 2006
ER -