Thermoelectric properties of p-type In-doped Pb1-xSn xTe

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1 Scopus citations


Lead tin telluride based alloys are p-type materials for thermoelectric applications in the 50-600°C temperatures range. Optimization of the thermoelectric properties for optimal performance at various temperature ranges can be achieved by varying the composition (x values) in Pb1-xSn xTe alloys. A different approach for controlling the carrier concentration can be obtained by indium doping of Pb]. xSn xTe alloys at a fixed composition. According to this second approach, a controlled energy gap and specific lattice thermal conductivity can be obtained. This communication focuses on the development of Pb 0.5Sn0.5Te alloys doped to different levels of indium concentration. The preparation techniques included preparation of master alloys with the desired composition, comminuting to appropriate powder particle size, cold compaction, sintering and annealing. The prepared samples were examined by SEM, EDS, XRD and the transport properties were determined. Maximal power factor values in the range of 11-12μW/cmK2 were obtained at temperatures of 150, 250 and 380°C for indium doping of 0.5, 0.1 0.03at%In. respectively.

Original languageEnglish
Title of host publicationProceedings ICT'06 - 25th International Conference on Thermoelectrics
Number of pages2
StatePublished - 1 Dec 2006
EventICT'06 - 25th International Conference on Thermoelectrics - Vienna, Austria
Duration: 6 Aug 200610 Aug 2006

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings


ConferenceICT'06 - 25th International Conference on Thermoelectrics

ASJC Scopus subject areas

  • Engineering (all)


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