Thin inter-polyoxide films for flash memories grown at low temperature (400°C) by oxygen

Tatsufumi Hamada, Yuji Saito, Masaki Hirayama, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Thin polyoxide films grown at 400°C on n +-poly-Si films, used as gate insulators in MOS capacitors, are shown to exhibit superior performance, with respect to conventional, thermally grown polyoxide films at 900°C, i.e., they possess lower leakage currents and can sustain higher electrical fields. They are also shown to be superior to, either polyoxide films grown at 980 °C on substrates treated by chemical mechanical polishing (CMP) [1] or polyoxide films grown by electron cyclotron resonance (ECR) nitrous oxide plasma at 400°C [2]. The present film growth techniques utilize oxygen radicals (O*), rather than oxygen molecules (O 2), which are used in the conventional processing. The oxygen radicals are generated by microwave (2.45 GHz) excited high-density plasma of Kr/O 2 gas mixture.

Original languageEnglish
Pages (from-to)423-425
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 1 Sep 2001
Externally publishedYes


  • Flash EEPROM
  • Low temperature process
  • Oxygen radical
  • Polyoxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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