Thin SiON film grown at low temperature (400 °C) by microwave-excited high-density Kr/O₂/N₂ plasma

Keyphrases

• Low Temperature 100%
• High Density 100%
• Oxynitride 100%
• N2 Plasma 100%
• Silicon Oxynitride (SiON) 100%
• Plasma Technique 50%
• Growth Temperature 50%
• Gate Insulator 50%
• IC Industry 50%
• Insulator Film 50%
• Silicon Substrate 25%
• Electrical Properties 25%
• Single Crystal 25%
• Low Stress 25%
• Silica 25%
• Downscaling 25%
• Gas Mixture 25%
• Growth Method 25%
• High Charge 25%
• SiO2 Film 25%
• Voltage Shift 25%
• (100) Silicon 25%
• Electrical Reliability 25%
• Ultralarge-scale Integration 25%
• Semiconductor Device Manufacture 25%
• Electrical Insulating Properties 25%
• Process Gases 25%
• Reliability Properties 25%
• Low Gate Voltage 25%
• Charge to Breakdown 25%
• Dry Oxidation 25%
• Stress Induced Leakage Current 25%
• MOS Devices 25%
• Industry Requirements 25%

Engineering

• Low-Temperature 100%
• Realization 100%
• Growth Temperature 100%
• Silicon Substrate 50%
• Gate Voltage 50%
• Gas Mixture 50%
• Sio2 Film 50%
• Promising Candidate 50%
• Growth Method 50%
• Process Gas 50%
• Stress Induced Leakage Current 50%
• Scale Integration 50%
• Semiconductor Device Fabrication 50%
• Dry Oxidation 50%

Material Science

• Density 100%
• Film 100%
• Oxynitride 50%
• Silicon 12%
• Oxidation Reaction 12%
• Single Crystal 12%
• Gas Mixture 12%
• Semiconductor Device Fabrication 12%