Three terminal n+ppn silicon CMOS light emitting devices (450nm - 750nm) with three order increase in quantum efficiency

L. W. Snyman; M. Du Plessis; H. Aharoni

doi:10.1109/ISIE.2005.1529088

Three terminal n⁺ppn silicon CMOS light emitting devices (450nm - 750nm) with three order increase in quantum efficiency

L. W. Snyman, M. Du Plessis, H. Aharoni

Department of Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We report on the dependency of quantum efficiency of an avalanching silicon n⁺p light emitting junction on current density and on the injection current from an adjacent lying forward biased an junction. The phenomenon was observed in a three terminal silicon bipolar junction CMOS light emitting device (Si BJ CMOS LED). The total increase in power and quantum coversion efficiency is about three orders of magnitude when compared to earlier published results. The optical emissions are about four orders higher than the low frequency detectivity for silicon CMOS detectors of comparable dimension. Because of its small spot size fabrication capabability (1 micron diameter), high speed capabilty (up to 1 GHz), the devices have numerous potential applications in future CMOS integrated circuitry, hybrid micro-systems and MOEMS.

Original language	English
Title of host publication	Proceedings of the IEEE International Symposium on Industrial Electronics 2005, ISIE 2005
Pages	1159-1166
Number of pages	8
DOIs	https://doi.org/10.1109/ISIE.2005.1529088
State	Published - 1 Dec 2005
Event	IEEE International Symposium on Industrial Electronics 2005, ISIE 2005 - Dubrovnik, Croatia Duration: 20 Jun 2005 → 23 Jun 2005

Publication series

Name	IEEE International Symposium on Industrial Electronics
Volume	III

Conference

Conference	IEEE International Symposium on Industrial Electronics 2005, ISIE 2005
Country/Territory	Croatia
City	Dubrovnik
Period	20/06/05 → 23/06/05

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISIE.2005.1529088

Cite this

Snyman, L. W., Du Plessis, M., & Aharoni, H. (2005). Three terminal n⁺ppn silicon CMOS light emitting devices (450nm - 750nm) with three order increase in quantum efficiency. In Proceedings of the IEEE International Symposium on Industrial Electronics 2005, ISIE 2005 (pp. 1159-1166). Article 1529088 (IEEE International Symposium on Industrial Electronics; Vol. III). https://doi.org/10.1109/ISIE.2005.1529088

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abstract = "We report on the dependency of quantum efficiency of an avalanching silicon n+p light emitting junction on current density and on the injection current from an adjacent lying forward biased an junction. The phenomenon was observed in a three terminal silicon bipolar junction CMOS light emitting device (Si BJ CMOS LED). The total increase in power and quantum coversion efficiency is about three orders of magnitude when compared to earlier published results. The optical emissions are about four orders higher than the low frequency detectivity for silicon CMOS detectors of comparable dimension. Because of its small spot size fabrication capabability (1 micron diameter), high speed capabilty (up to 1 GHz), the devices have numerous potential applications in future CMOS integrated circuitry, hybrid micro-systems and MOEMS.",

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Snyman, LW, Du Plessis, M & Aharoni, H 2005, Three terminal n⁺ppn silicon CMOS light emitting devices (450nm - 750nm) with three order increase in quantum efficiency. in Proceedings of the IEEE International Symposium on Industrial Electronics 2005, ISIE 2005., 1529088, IEEE International Symposium on Industrial Electronics, vol. III, pp. 1159-1166, IEEE International Symposium on Industrial Electronics 2005, ISIE 2005, Dubrovnik, Croatia, 20/06/05. https://doi.org/10.1109/ISIE.2005.1529088

Three terminal n⁺ppn silicon CMOS light emitting devices (450nm - 750nm) with three order increase in quantum efficiency. / Snyman, L. W.; Du Plessis, M.; Aharoni, H.
Proceedings of the IEEE International Symposium on Industrial Electronics 2005, ISIE 2005. 2005. p. 1159-1166 1529088 (IEEE International Symposium on Industrial Electronics; Vol. III).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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