Abstract
The carrier relaxation kinetics and nonlinear optical properties of strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QWR) samples were examined with time-resolved cathodoluminescence. A temperature dependence of the QWR luminescence decay time reveals that thermal activation of carriers in the QWR and transfer to and from In0.49Ga0.51P barriers plays an important role in determining the measured lifetimes. The presence of disorder in the QWRs was found to induce inhomogeneous regions which exhibit large variations in carrier capture and band filling.
Original language | English |
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Pages (from-to) | 3716-3718 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 24 |
DOIs | |
State | Published - 9 Dec 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)