Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AIGaAs layers grown on a patterned GaAs(001) substrate

D. H. Rich; H. T. Lin; A. Konkar; P. Chen; A. Madhukar

doi:10.1063/1.117799

Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AIGaAs layers grown on a patterned GaAs(001) substrate

D. H. Rich, H. T. Lin, A. Konkar, P. Chen, A. Madhukar

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs(001) with time-resolved cathodoluminescence (CL). Time-delayed CL spectra at 87 K reveal that (i) relaxation of hot carriers into the largest 3D confined regions occurs on a time scale of a few hundred ps during the onset of luminescence, and (ii) the luminescence decay time also increases for these larger confined regions, owing to thermal reemission from QWs, diffusion across Al_xGa_1-xAs barriers, and carrier feeding from surrounding thinner QWs.

Original language	English
Pages (from-to)	665-667
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	5
DOIs	https://doi.org/10.1063/1.117799
State	Published - 29 Jul 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AIGaAs layers grown on a patterned GaAs(001) substrate",

abstract = "We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs(001) with time-resolved cathodoluminescence (CL). Time-delayed CL spectra at 87 K reveal that (i) relaxation of hot carriers into the largest 3D confined regions occurs on a time scale of a few hundred ps during the onset of luminescence, and (ii) the luminescence decay time also increases for these larger confined regions, owing to thermal reemission from QWs, diffusion across AlxGa1-xAs barriers, and carrier feeding from surrounding thinner QWs.",

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AU - Rich, D. H.

AU - Lin, H. T.

AU - Konkar, A.

AU - Chen, P.

AU - Madhukar, A.

PY - 1996/7/29

Y1 - 1996/7/29

N2 - We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs(001) with time-resolved cathodoluminescence (CL). Time-delayed CL spectra at 87 K reveal that (i) relaxation of hot carriers into the largest 3D confined regions occurs on a time scale of a few hundred ps during the onset of luminescence, and (ii) the luminescence decay time also increases for these larger confined regions, owing to thermal reemission from QWs, diffusion across AlxGa1-xAs barriers, and carrier feeding from surrounding thinner QWs.

AB - We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs(001) with time-resolved cathodoluminescence (CL). Time-delayed CL spectra at 87 K reveal that (i) relaxation of hot carriers into the largest 3D confined regions occurs on a time scale of a few hundred ps during the onset of luminescence, and (ii) the luminescence decay time also increases for these larger confined regions, owing to thermal reemission from QWs, diffusion across AlxGa1-xAs barriers, and carrier feeding from surrounding thinner QWs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AIGaAs layers grown on a patterned GaAs(001) substrate

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