Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO2

N. K. Berger; R. Shuker

doi:10.1063/1.124009

Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO₂

N. K. Berger, R. Shuker

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The reflection behavior changes in VO₂ films are investigated for the 1.06 μm wavelength at the semiconductor-metal phase transition. A pulsed Nd:YAG laser is phase conjugated using the nonlinearity caused by the photoinduced transition. The reflection coefficient of the conjugated wave, the threshold energy density, and the rise time of the signal are analyzed at 60 Hz Q-switching rate and average intensities of the pump and probe.

Original language	English
Pages (from-to)	2770-2772
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	19
DOIs	https://doi.org/10.1063/1.124009
State	Published - 10 May 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.124009

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@article{c5f9e0667984478c81c76bfc92d359f2,

title = "Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO2",

abstract = "The reflection behavior changes in VO2 films are investigated for the 1.06 μm wavelength at the semiconductor-metal phase transition. A pulsed Nd:YAG laser is phase conjugated using the nonlinearity caused by the photoinduced transition. The reflection coefficient of the conjugated wave, the threshold energy density, and the rise time of the signal are analyzed at 60 Hz Q-switching rate and average intensities of the pump and probe.",

author = "Berger, {N. K.} and R. Shuker",

year = "1999",

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doi = "10.1063/1.124009",

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volume = "74",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO2

AU - Berger, N. K.

AU - Shuker, R.

PY - 1999/5/10

Y1 - 1999/5/10

N2 - The reflection behavior changes in VO2 films are investigated for the 1.06 μm wavelength at the semiconductor-metal phase transition. A pulsed Nd:YAG laser is phase conjugated using the nonlinearity caused by the photoinduced transition. The reflection coefficient of the conjugated wave, the threshold energy density, and the rise time of the signal are analyzed at 60 Hz Q-switching rate and average intensities of the pump and probe.

AB - The reflection behavior changes in VO2 films are investigated for the 1.06 μm wavelength at the semiconductor-metal phase transition. A pulsed Nd:YAG laser is phase conjugated using the nonlinearity caused by the photoinduced transition. The reflection coefficient of the conjugated wave, the threshold energy density, and the rise time of the signal are analyzed at 60 Hz Q-switching rate and average intensities of the pump and probe.

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U2 - 10.1063/1.124009

DO - 10.1063/1.124009

M3 - Article

AN - SCOPUS:0032613711

SN - 0003-6951

VL - 74

SP - 2770

EP - 2772

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO₂

Abstract

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