Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO2

N. K. Berger, R. Shuker

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The reflection behavior changes in VO2 films are investigated for the 1.06 μm wavelength at the semiconductor-metal phase transition. A pulsed Nd:YAG laser is phase conjugated using the nonlinearity caused by the photoinduced transition. The reflection coefficient of the conjugated wave, the threshold energy density, and the rise time of the signal are analyzed at 60 Hz Q-switching rate and average intensities of the pump and probe.

Original languageEnglish
Pages (from-to)2770-2772
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number19
DOIs
StatePublished - 10 May 1999

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