@inbook{9cd7cf9b761c4235a7a92a79e879752a,
title = "Titanium silicide formation in TiSi2/TiB2 bilayer barrier structure",
abstract = "Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium silicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.",
author = "G. Sade and J. Pelleg and V. Ezersky",
year = "1997",
month = jan,
day = "1",
language = "English",
series = "Microelectronic Engineering",
number = "1-4",
editor = "C.N. Afonso and E. Matthias and T. Szorenyi",
booktitle = "Symposium J on Advanced Materials for Interconnections",
edition = "1-4",
note = "Proceedings of the 1996 E-MRS Spring Conference ; Conference date: 04-06-1996 Through 07-06-1996",
}