Titanium silicide formation in TiSi2/TiB2 bilayer barrier structure

G. Sade, J. Pelleg, V. Ezersky

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations


Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium silicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.

Original languageEnglish
Title of host publicationSymposium J on Advanced Materials for Interconnections
EditorsC.N. Afonso, E. Matthias, T. Szorenyi
StatePublished - 1 Jan 1997
EventProceedings of the 1996 E-MRS Spring Conference - Strasbourg, Fr
Duration: 4 Jun 19967 Jun 1996

Publication series

NameMicroelectronic Engineering
ISSN (Print)0167-9317


ConferenceProceedings of the 1996 E-MRS Spring Conference
CityStrasbourg, Fr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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