Titanium suicide formation in TiSi2/TiB2 bilayer barrier structure

G. Sade, J. Pelleg, V. Ezersky

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium suicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.

Original languageEnglish
Pages (from-to)317-323
Number of pages7
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - 1 Jan 1997


  • Diffusion barrier
  • Sputtering
  • Titanium boride
  • Titanium suicide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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