Abstract
Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium suicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.
Original language | English |
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Pages (from-to) | 317-323 |
Number of pages | 7 |
Journal | Microelectronic Engineering |
Volume | 33 |
Issue number | 1-4 |
DOIs | |
State | Published - 1 Jan 1997 |
Keywords
- Diffusion barrier
- Sputtering
- Titanium boride
- Titanium suicide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering