Titanium suicide formation in TiSi2/TiB2 bilayer barrier structure

G. Sade; J. Pelleg; V. Ezersky

doi:10.1016/s0167-9317(96)00060-3

Titanium suicide formation in TiSi₂/TiB₂ bilayer barrier structure

G. Sade
, J. Pelleg
, V. Ezersky

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Titanium disilicide is used as a sublayer in the TiB₂/TiSi₂ barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB₂/TiSi₂ bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi₂ layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi₂ sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium suicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi₂ interface.

Original language	English
Pages (from-to)	317-323
Number of pages	7
Journal	Microelectronic Engineering
Volume	33
Issue number	1-4
DOIs	https://doi.org/10.1016/s0167-9317(96)00060-3
State	Published - 1 Jan 1997

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Diffusion barrier
Sputtering
Titanium boride
Titanium suicide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/s0167-9317(96)00060-3

Cite this

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title = "Titanium suicide formation in TiSi2/TiB2 bilayer barrier structure",

abstract = "Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium suicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.",

keywords = "Diffusion barrier, Sputtering, Titanium boride, Titanium suicide",

author = "G. Sade and J. Pelleg and V. Ezersky",

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doi = "10.1016/s0167-9317(96)00060-3",

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T1 - Titanium suicide formation in TiSi2/TiB2 bilayer barrier structure

AU - Sade, G.

AU - Pelleg, J.

AU - Ezersky, V.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium suicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.

AB - Titanium disilicide is used as a sublayer in the TiB2/TiSi2 barrier structure to prevent fast outdiffusion of boron from titanium boride into the semiconductor device. The TiB2/TiSi2 bilayer was deposited by magnetron sputtering, and the low resistance C54 TiSi2 layer was formed by post-deposition vacuum annealing. Co-sputtering method was used to deposit the TiSi2 sublayer. The composition of the as-deposited films was monitored by Auger spectroscopy, and formation was studied by X-ray diffraction (XRD) and cross-sectional TEM (XTEM). It was found by XRD and high-resolution TEM that the as-deposited bilayer had an amorphous structure. Titanium suicide was formed not only in the co-deposited layer between the Ti and Si atoms, but also at the Si-TiSi2 interface.

KW - Diffusion barrier

KW - Sputtering

KW - Titanium boride

KW - Titanium suicide

UR - https://www.scopus.com/pages/publications/0039384478

U2 - 10.1016/s0167-9317(96)00060-3

DO - 10.1016/s0167-9317(96)00060-3

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