Towards a black-box methodology for SRAM stability analysis

Robert Giterman, Alexander Fish

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.

Original languageEnglish
Title of host publication2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479959877
DOIs
StatePublished - 1 Jan 2014
Externally publishedYes
Event2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel
Duration: 3 Dec 20145 Dec 2014

Publication series

Name2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conference

Conference2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Country/TerritoryIsrael
CityEilat
Period3/12/145/12/14

Keywords

  • Dynamic noise margin
  • SRAM
  • Separatrix
  • Stability analysis
  • Static noise margin

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