Trajectory codes for flash memory

Anxiao Jiang; Michael Langberg; Moshe Schwartz; Jehoshua Bruck

doi:10.1109/TIT.2013.2251755

Trajectory codes for flash memory

Anxiao Jiang, Michael Langberg, Moshe Schwartz, Jehoshua Bruck

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A generalized rewriting model is defined for flash memory that represents stored data and permitted rewrite operations by a directed graph. This model is a generalization of previously introduced rewriting models of codes, including floating codes, write-once memory codes, and buffer codes. This model is used to design a new rewriting code for flash memories. The new code, referred to as trajectory code, allows stored data to be rewritten as many times as possible without block erasures. It is proved that the trajectory codes are asymptotically optimal for a wide range of scenarios. In addition, rewriting codes that use a randomized rewriting scheme are presented that obtain good performance with high probability for all possible rewrite sequences.

Original language	English
Article number	6476065
Pages (from-to)	4530-4541
Number of pages	12
Journal	IEEE Transactions on Information Theory
Volume	59
Issue number	7
DOIs	https://doi.org/10.1109/TIT.2013.2251755
State	Published - 1 Jan 2013

Keywords

Codes
Flash memory
Nonvolatile memory

ASJC Scopus subject areas

Information Systems
Computer Science Applications
Library and Information Sciences

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10.1109/TIT.2013.2251755

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N2 - A generalized rewriting model is defined for flash memory that represents stored data and permitted rewrite operations by a directed graph. This model is a generalization of previously introduced rewriting models of codes, including floating codes, write-once memory codes, and buffer codes. This model is used to design a new rewriting code for flash memories. The new code, referred to as trajectory code, allows stored data to be rewritten as many times as possible without block erasures. It is proved that the trajectory codes are asymptotically optimal for a wide range of scenarios. In addition, rewriting codes that use a randomized rewriting scheme are presented that obtain good performance with high probability for all possible rewrite sequences.

AB - A generalized rewriting model is defined for flash memory that represents stored data and permitted rewrite operations by a directed graph. This model is a generalization of previously introduced rewriting models of codes, including floating codes, write-once memory codes, and buffer codes. This model is used to design a new rewriting code for flash memories. The new code, referred to as trajectory code, allows stored data to be rewritten as many times as possible without block erasures. It is proved that the trajectory codes are asymptotically optimal for a wide range of scenarios. In addition, rewriting codes that use a randomized rewriting scheme are presented that obtain good performance with high probability for all possible rewrite sequences.

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Trajectory codes for flash memory

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Keywords

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