The authors have studied the fast, photoconductive kinetics of junction devices under excitation by fast light-emitting diodes (LEDs). These studies allow to determine the nature of the primary photocurrents to be determined as to whether they are diffusion currents, drift currents, or both. The authors studied both CdZnS/CuInSe//2 devices and n** plus /p-/p GaAs devices. The results of computer simulation were compared with the experimental results, and a number of important transport parameters were determined for the devices.
|Number of pages||6|
|Journal||Conference Record of the IEEE Photovoltaic Specialists Conference|
|State||Published - 1 Dec 1985|
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering