Abstract
Transistor characteristics are reviewed while operating in the secondary breakdown (S. B. ) region. Series of experimental transistors of varying epitaxial collector structure were built and subjected to S. B. The effects both visible and electrical, were investigated, summarized and related to the structure and to the electrical fields and carrier distribution in various operating conditions.
| Original language | English |
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| Pages | 1-8 |
| Number of pages | 8 |
| State | Published - 1 Jan 1973 |
| Event | IEEE Conv of Electr and Electron Eng in Isr, 8th, Proc, Pap - Tel-Aviv Duration: 30 Apr 1973 → 3 May 1973 |
Conference
| Conference | IEEE Conv of Electr and Electron Eng in Isr, 8th, Proc, Pap |
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| City | Tel-Aviv |
| Period | 30/04/73 → 3/05/73 |
ASJC Scopus subject areas
- General Engineering