Transistor structure relation to secondary breakdown and its effects

H. Aharoni, A. Bar-Lev

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The paper reviews transistor characteristics while operating in the secondary breakdown (S.B.) region. Series of experimental transistors of varying epitaxial collector structure were built and subjected to S.B. The effects both visible and electrical, were investigated, summarized and related to the structure and to the electrical fields and carrier distribution in various operating conditions.

Original languageEnglish
Pages (from-to)451-452
Number of pages2
JournalMicroelectronics Reliability
Volume14
Issue number5-6
DOIs
StatePublished - 1 Jan 1975

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