Transistor Structure Relation to Secondary Breakdown and its Effects

H. Aharoni, A. Bar-Lev

Research output: Contribution to conferencePaperpeer-review

Abstract

Transistor characteristics are reviewed while operating in the secondary breakdown (S. B. ) region. Series of experimental transistors of varying epitaxial collector structure were built and subjected to S. B. The effects both visible and electrical, were investigated, summarized and related to the structure and to the electrical fields and carrier distribution in various operating conditions.

Original languageEnglish
Pages1-8
Number of pages8
StatePublished - 1973
EventProceedings of the 8th Convention of Electrical and Electronics Engineers in Israel - Tel Aviv, Israel
Duration: 30 Apr 19733 May 1973

Conference

ConferenceProceedings of the 8th Convention of Electrical and Electronics Engineers in Israel
Abbreviated titleIEEE Conv of Electr and Electron Eng in Isr, 8th, Proc, Pap
Country/TerritoryIsrael
CityTel Aviv
Period30/04/733/05/73

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