Transistor characteristics are reviewed while operating in the secondary breakdown (S. B. ) region. Series of experimental transistors of varying epitaxial collector structure were built and subjected to S. B. The effects both visible and electrical, were investigated, summarized and related to the structure and to the electrical fields and carrier distribution in various operating conditions.
|Number of pages||8|
|State||Published - 1973|
|Event||Proceedings of the 8th Convention of Electrical and Electronics Engineers in Israel - Tel Aviv, Israel|
Duration: 30 Apr 1973 → 3 May 1973
|Conference||Proceedings of the 8th Convention of Electrical and Electronics Engineers in Israel|
|Abbreviated title||IEEE Conv of Electr and Electron Eng in Isr, 8th, Proc, Pap|
|Period||30/04/73 → 3/05/73|