Transport properties of PbI2-doped PbTe

Y. Gelbstein; Z. Dashevsky; M. P. Dariel

doi:10.1109/ICT.2002.1190252

Transport properties of PbI₂-doped PbTe

Y. Gelbstein, Z. Dashevsky, M. P. Dariel

Department of Materials Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The transport properties of homogeneous, cold- Compacted and sintered bI₂-doped PbTe samples were measured and compared to those of cast and single-crystal samples with similar dopant concentrations, as reported in the literature [1-4]. Such a comparison between sintered, cast and single-crystal materials is mandatory in order to determine the potential of graded sintered samples for thermoelectric applications. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300-800K, while the Hall coefficient and the electron mobility were measured in the temperature range of 80-30QK. The power-factor values of the prepared samples were found to be comparable to those of cast and single-crystal materials up to 800K.

Original language	English
Title of host publication	Proceedings ICT 2002
Subtitle of host publication	21st International Conference on Thermoelectrics
Publisher	Institute of Electrical and Electronics Engineers
Pages	5-8
Number of pages	4
ISBN (Electronic)	0780376838
DOIs	https://doi.org/10.1109/ICT.2002.1190252
State	Published - 1 Jan 2002
Event	21st International Conference on Thermoelectrics, ICT 2002 - Long Beach, United States Duration: 25 Aug 2002 → 29 Aug 2002

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings
Volume	2002-January

Conference

Conference	21st International Conference on Thermoelectrics, ICT 2002
Country/Territory	United States
City	Long Beach
Period	25/08/02 → 29/08/02

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/ICT.2002.1190252

Cite this

Gelbstein, Y., Dashevsky, Z., & Dariel, M. P. (2002). Transport properties of PbI₂-doped PbTe. In Proceedings ICT 2002: 21st International Conference on Thermoelectrics (pp. 5-8). Article 1190252 (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICT.2002.1190252

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abstract = "The transport properties of homogeneous, cold- Compacted and sintered bI2-doped PbTe samples were measured and compared to those of cast and single-crystal samples with similar dopant concentrations, as reported in the literature [1-4]. Such a comparison between sintered, cast and single-crystal materials is mandatory in order to determine the potential of graded sintered samples for thermoelectric applications. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300-800K, while the Hall coefficient and the electron mobility were measured in the temperature range of 80-30QK. The power-factor values of the prepared samples were found to be comparable to those of cast and single-crystal materials up to 800K.",

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Gelbstein, Y , Dashevsky, Z & Dariel, MP 2002, Transport properties of PbI₂-doped PbTe. in Proceedings ICT 2002: 21st International Conference on Thermoelectrics., 1190252, International Conference on Thermoelectrics, ICT, Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers, pp. 5-8, 21st International Conference on Thermoelectrics, ICT 2002, Long Beach, United States, 25/08/02. https://doi.org/10.1109/ICT.2002.1190252

Transport properties of PbI₂-doped PbTe. / Gelbstein, Y.; Dashevsky, Z.; Dariel, M. P.
Proceedings ICT 2002: 21st International Conference on Thermoelectrics. Institute of Electrical and Electronics Engineers, 2002. p. 5-8 1190252 (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The transport properties of homogeneous, cold- Compacted and sintered bI2-doped PbTe samples were measured and compared to those of cast and single-crystal samples with similar dopant concentrations, as reported in the literature [1-4]. Such a comparison between sintered, cast and single-crystal materials is mandatory in order to determine the potential of graded sintered samples for thermoelectric applications. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300-800K, while the Hall coefficient and the electron mobility were measured in the temperature range of 80-30QK. The power-factor values of the prepared samples were found to be comparable to those of cast and single-crystal materials up to 800K.

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